2SA1962 Datasheet - Inchange Semiconductor

2SA1962, POWER TRANSISTOR

www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min). Good Linearity of hFE. Complement to Type 2SC5242 APPLICATIONS. Power ampl.

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Datasheet Details

Part number:

2SA1962

Manufacturer:

Inchange Semiconductor

File Size:

112.15 KB

Description:

POWER TRANSISTOR

Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V

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2SA1962 POWER TRANSISTOR Inchange Semiconductor

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