2SA1962 POWER TRANSISTOR

Inchange Semiconductor

Description

www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min). Good Linearity of hFE. Complement to Type 2SC5242 APPLICATIONS. Power ampl.

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Datasheet Specifications

Part number: 2SA1962
Manufacturer: Inchange Semiconductor
File Size: 112.15 KB
Datasheet: 2SA1962_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V

2SA1962 Distributors

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2SA1962 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA1962-like datasheet