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2SA1967 - NPN Triple Diffused Planar Silicon Transistor

2SA1967 Description

Ordering number:5182 NPN Triple Diffused Planar Silicon Transistor 2SA1967 High-Voltage Amplifier, High-Voltage Switching Applications .

2SA1967 Features

* High breakdown voltage (VCEO min=
* 900V).
* Small Cob (Cob typ=2.2pF).
* High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta

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Datasheet Details

Part number
2SA1967
Manufacturer
Sanyo Semicon Device
File Size
88.48 KB
Datasheet
2SA1967_SanyoSemiconDevice.pdf
Description
NPN Triple Diffused Planar Silicon Transistor

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NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
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