Datasheet4U Logo Datasheet4U.com

2SA1967

NPN Triple Diffused Planar Silicon Transistor

2SA1967 Features

* High breakdown voltage (VCEO min=

* 900V).

* Small Cob (Cob typ=2.2pF).

* High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SA1967] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Volta

2SA1967 Datasheet (88.48 KB)

Preview of 2SA1967 PDF

Datasheet Details

Part number:

2SA1967

Manufacturer:

Sanyo Semicon Device

File Size:

88.48 KB

Description:

Npn triple diffused planar silicon transistor.

📁 Related Datasheet

2SA1960 - Silicon NPN Epitaxial Planar Transistor (Hitachi Semiconductor)
2SA1960 Silicon NPN Epitaxial ADE-208-392 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency hi.

2SA1961 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
Transistor 2SA1961 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC5419 6.9±0.1 0.15 Unit: mm 1.05 2.5±0.1 ±0.05 (1..

2SA1962 - Silicon PNP Transistor (Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm • High breakdown voltage: VCEO = −230 V (m.

2SA1962 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SA1962 DESCRIPTION ·With TO-3P(I) package ·Complem.

2SA1962 - PNP Epitaxial Silicon Transistor (Fairchild Semiconductor)
2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou.

2SA1962 - POWER TRANSISTOR (Inchange Semiconductor)
..net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Brea.

2SA1963 - PNP Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Featu.

2SA1964 - Silicon PNP Power Transistor (INCHANGE)
isc Silicon PNP Power Transistor 2SA1964 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area .

TAGS

2SA1967 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device

Image Gallery

2SA1967 Datasheet Preview Page 2 2SA1967 Datasheet Preview Page 3

2SA1967 Distributor