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· High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process.
Package Dimensions
unit:mm
2010C
[2...
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yp.
10 40
Max.
100 200 1 1.5 -
Unit
µA V V V MHz Pf
HIGH POWER DISSIPATION MEDIUM SPEED POWER SWITCHING
Cob
Classification of hFE
Rank Range B 60...
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ithin the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handli...
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.4
BCE
Weight : Approx 6.0g
a. Part No.
b. Lot No.
Collector Current IC(A) 1A
I C– V CE Characteristics (Typical)
15
700mA
500mA
300mA
200m...
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exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL...
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t V mA ms °C/W
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part. Note2: Lead bending: 5 mm is the minimum to be kept ...
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-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, I...
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Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 7
200 mA
V CE ( sat ) ...
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