Datasheet Details
Part number:
2SA1962
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
207.29 KB
Description:
Silicon PNP Transistor
Features
* plicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. 4 2012-08-31
2SA1962_ToshibaSemiconductor.pdf
2SA1962, Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm High breakdown voltage: VCEO = 230 V (min) Complementary to 2SC5242 Recommended for 80-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO 230 V Collector-emitter voltage V CEO 230 V Emitter-base voltage VEBO
2SA1962 Distributor
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