2SA1924 Datasheet - Toshiba Semiconductor

2SA1924, SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm * High breakdown voltage: V.

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2SA1924_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1924

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

150.86 KB

Description:

SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Applications

* 2SA1924 Unit: mm
* High breakdown voltage: VCEO =
* 400 V
* Low saturation voltage: VCE (sat) =
* 1 V (max) (IC =
* 100 mA, IB =
* 10 mA)
* Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = 25°C) Characteristics Col

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2SA1924 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR Toshiba Semiconductor

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