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2SA1924 Datasheet - Toshiba Semiconductor

2SA1924 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1924 High-Voltage Switching Applications 2SA1924 Unit: mm High breakdown voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 1 V (max) (IC = 100 mA, IB = 10 mA) Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base .

2SA1924_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1924

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

150.86 KB

Description:

Silicon pnp triple diffused type transistor.

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2SA1924 2SA1924 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR Toshiba Semiconductor

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