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2SA1926 - Silicon PNP Epitaxial Type Transistor

2SA1926 Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1926 Power Amplifier Applications Power Switching Applications 2SA1926 Unit: mm <.

2SA1926 Applications

* Power Switching Applications 2SA1926 Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.17 V (max) (IC =
* 1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
* 80 V Collector-emitter voltage VCEO

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Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor
Toshiba Semiconductor 2SA1926-like datasheet