2SA1926 Silicon PNP Epitaxial Type Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1926 Power Amplifier Applications Power Switching Applications 2SA1926 Unit: mm <.

📥 Download Datasheet

2SA1926 Datasheet Preview — Preview of 2SA1926 PDF

Datasheet Specifications

Part number: 2SA1926
Manufacturer: Toshiba ↗ Semiconductor
File Size: 96.67 KB
Datasheet: 2SA1926_ToshibaSemiconductor.pdf
Description: Silicon PNP Epitaxial Type Transistor

Applications

* Power Switching Applications 2SA1926 Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.17 V (max) (IC =
* 1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO
* 80 V Collector-emitter voltage VCEO

2SA1926 Distributors

📁 Related Datasheet

2SA1920 2SA1928 2SA1900 2SA1900U 2SA1906 2SA1907

📌 All Tags

2SA1926 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SA1926-like datasheet