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2SA1926 Datasheet - Toshiba Semiconductor

2SA1926 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1926 Power Amplifier Applications Power Switching Applications 2SA1926 Unit: mm Low collector saturation voltage: VCE (sat) = 0.17 V (max) (IC = 1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 8 V Collector current IC 3 A Base curren.

2SA1926_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1926

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

96.67 KB

Description:

Silicon pnp epitaxial type transistor.

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2SA1926 2SA1926 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

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