2SA1926
Toshiba ↗ Semiconductor
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Silicon pnp epitaxial type transistor.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1926
Power Amplifier Applications Power Switching Applications
2SA1926
Unit: mm
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2SA1923 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
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2SA1923
High Voltage Switching Applications
2SA1923
Unit: mm
• High voltage: VCEO = −400 V • Low.
2SA1924 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
(Toshiba Semiconductor)
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2SA1924
High-Voltage Switching Applications
2SA1924
Unit: mm
• High breakdown voltage: VCEO = −4.
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2SA1900 - Medium Power Transistor
(Rohm)
Transistors
2SA1900
Medium power transistor (−50V, −1A)
2SA1900
zFeatures 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/
IB=−500mA/−5.
2SA1900 - Medium power transistor
(Kexin)
SMD Type
Medium power transistor 2SA1900
TransistIoCrs
Features
Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=.
2SA1900U - PNP Transistor
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2SA1900U
PNP Silicon Epitaxial Planar Transistor
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Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage
Collect.
