2SA1923 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba Semiconductor

Datasheet Details

Part number	2SA1923
Manufacturer	Toshiba Semiconductor
File Size	146.46 KB
Description	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet	2SA1923 Datasheet
Additional preview pages of the 2SA1923 datasheet.

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications 2SA1923 Unit: mm • High voltage: VCEO = −400 V • Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 1 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.

Published: Mar 22, 2005 |