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2SA1923 Datasheet - Toshiba Semiconductor

2SA1923 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications 2SA1923 Unit: mm High voltage: VCEO = 400 V Low saturation voltage: VCE (sat) = 1 V (max) (IC = 100 mA, IB = 10 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperat.

2SA1923_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1923

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

146.46 KB

Description:

Silicon pnp triple diffused type transistor.

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2SA1923 2SA1923 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR Toshiba Semiconductor

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