2SA1928
IDC
110.01kb
Pnp transistor.
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2SA1920 - (2SA1870 - 2SA1920) High Voltage Switching Transistor
(Rohm)
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2SA1923 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1923
High Voltage Switching Applications
2SA1923
Unit: mm
• High voltage: VCEO = −400 V • Low.
2SA1924 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1924
High-Voltage Switching Applications
2SA1924
Unit: mm
• High breakdown voltage: VCEO = −4.
2SA1925 - TRANSISTOR
(Toshiba Semiconductor)
.
2SA1926 - Silicon PNP Epitaxial Type Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1926
Power Amplifier Applications Power Switching Applications
2SA1926
Unit: mm
• Low.
2SA1900 - Medium Power Transistor
(Rohm)
Transistors
2SA1900
Medium power transistor (−50V, −1A)
2SA1900
zFeatures 1) Low saturation voltage, typically VCE(sat)=−0.15V at IC/
IB=−500mA/−5.
2SA1900 - Medium power transistor
(Kexin)
SMD Type
Medium power transistor 2SA1900
TransistIoCrs
Features
Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=.
2SA1900U - PNP Transistor
(SEMTECH)
2SA1900U
PNP Silicon Epitaxial Planar Transistor
Medium power transistor
Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage
Collect.
2SA1905 - Silicon PNP Epitaxial Type Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1905
High-Current Switching Applications.
2SA1905
Unit: mm
• Low collector saturation.
2SA1906 - High-speed Switching Transistor
(ROHM)
Transistors
2SA1952 / 2SA1906 / 2SA2006
High-speed Switching Transistor (−60V, −5A)
2SA1952 / 2SA1906 / 2SA2006
Features
1) High speed switching. .
