2SA1905 - Silicon PNP Epitaxial Type Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SA1905
Manufacturer	Toshiba Semiconductor
File Size	144.10 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1905 Datasheet
Additional preview pages of the 2SA1905 datasheet.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5076 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −1 A Collector power dissipation PC 1.3 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g.

Published: Mar 22, 2005 |