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2SA1905 Datasheet - Toshiba Semiconductor

2SA1905 Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5076 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5.

2SA1905_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1905

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

144.10 KB

Description:

Silicon pnp epitaxial type transistor.

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2SA1905 2SA1905 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

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