2SA1930 Datasheet - Toshiba Semiconductor

2SA1930 - PNP Transistor

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VE.

2SA1930_ToshibaSemiconductor.pdf

2SA1930 Datasheet Preview — Preview of 2SA1930 PDF

Datasheet Details

Part number:

2SA1930

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

138.01 KB

Description:

Pnp transistor.

2SA1930 Distributor

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2SA1930 PNP Transistor Toshiba Semiconductor