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2SA1937 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

2SA1937 Description

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm * High voltage: VCEO = .

2SA1937 Features

* weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U. S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all ap

2SA1937 Applications

* 2SA1937 Unit: mm
* High voltage: VCEO =
* 600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc

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SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor 2SA1937-like datasheet

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