2SA1937 Datasheet - Toshiba Semiconductor

2SA1937 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm High voltage: VCEO = 600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg .

2SA1937 Features

* weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all ap

2SA1937_ToshibaSemiconductor.pdf