2SA1933 Silicon PNP Epitaxial Type Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm <.

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Datasheet Specifications

Part number: 2SA1933
Manufacturer: Toshiba ↗ Semiconductor
File Size: 125.85 KB
Datasheet: 2SA1933_ToshibaSemiconductor.pdf
Description: Silicon PNP Epitaxial Type Transistor

Applications

* Industrial Applications Unit: mm
* Low collector saturation voltage: VCE (sat) =
* 0.4 V (max) (IC =
* 2 A)
* High-speed switching time: tstg = 1.0 μs (typ. )
* Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Uni

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2SA1933 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

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