2SA1933
Toshiba ↗ Semiconductor
125.85 KB
Silicon pnp epitaxial type transistor.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1933
2SA1933
High-Current Switching Applications
Industrial Applications Unit: mm
<.
📁 Related Datasheet
2SA1930 - PNP Transistor
(Toshiba Semiconductor)
2SA1930
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1930
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
• •
High tr.
2SA1930 - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171
APPLICATIO.
2SA1930 - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1930
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.
/ Features
， 2SC5171 。 H.
2SA1930 - SILICON PNP TRANSISTOR
(LZG)
2SA1930(3CA1930)
PNP /SILICON PNP TRANSISTOR
:。
Purpose: General power and driver stage amplifier applications.
：， 2SC5171(3DA5171)。
Features: Hig.
2SA1930I - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1930I
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-251 PNP 。Silicon PNP transistor in a TO-251 Plastic Package.
/ Features
， 2SC5171I 。 H.
2SA1930S - Silicon PNP transistor
(BLUE ROCKET ELECTRONICS)
2SA1930S
Rev.F Mar.-2016
DATA SHEET
/ Descriptions TO-126 PNP 。Silicon PNP transistor in a TO-126 Plastic Package.
/ Features
， 2SC5171S 。 H.
2SA1931 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to T.
2SA1931 - Silicon PNP Transistor
(Toshiba)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
2SA1931
Unit: mm
• Low saturation voltage: V.
