2SA653 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min. Contunuous Collector Current IC= -1A. Power Dissipation PC= 15W @TC= 25℃.

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Datasheet Specifications

Part number: 2SA653
Manufacturer: Inchange Semiconductor
File Size: 189.84 KB
Datasheet: 2SA653_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Curren

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2SA653 POWER TRANSISTOR Inchange Semiconductor

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