2SA656 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA656 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min. Complement to Type 2SC519. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SA656
Manufacturer: Inchange Semiconductor
File Size: 187.63 KB
Datasheet: 2SA656_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications.
* Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base V

2SA656 Distributors

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2SA656A 2SA650 2SA653 2SA657 2SA657A 2SA658

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2SA656 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA656-like datasheet