2SA656 Datasheet - Inchange Semiconductor

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2SA656 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA656 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -110V(Min. Complement to Type 2SC519. Minimum Lot-to-Lot variations for robust device.

2SA656_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA656

Manufacturer:

Inchange Semiconductor

File Size:

187.63 KB

Description:

POWER TRANSISTOR

Applications

* Power amplifier applications.
* Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base V

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