2SA657 POWER TRANSISTOR

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SA657 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Complement to Type 2SC520. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SA657
Manufacturer: Inchange Semiconductor
File Size: 189.82 KB
Datasheet: 2SA657_InchangeSemiconductor.pdf
Description: POWER TRANSISTOR

Applications

* Power amplifier applications.
* Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Vo

2SA657 Distributors

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2SA657A 2SA650 2SA653 2SA656 2SA656A 2SA658

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2SA657 POWER TRANSISTOR Inchange Semiconductor

Inchange Semiconductor 2SA657-like datasheet