2SA657 Datasheet - Inchange Semiconductor

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2SA657 POWER TRANSISTOR

isc Silicon PNP Power Transistor 2SA657 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min. Complement to Type 2SC520. Minimum Lot-to-Lot variations for robust device p.

2SA657_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA657

Manufacturer:

Inchange Semiconductor

File Size:

189.82 KB

Description:

POWER TRANSISTOR

Applications

* Power amplifier applications.
* Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Vo

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