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2SA658 Power Transistor

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Description

isc Silicon PNP Power Transistor 2SA658 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min. Complement to Type 2SC521. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number
2SA658
Manufacturer
Inchange Semiconductor
File Size
189.69 KB
Datasheet
2SA658_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Power amplifier applications.
* Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Vol

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