2SA658 Datasheet - Inchange Semiconductor

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2SA658 Power Transistor

isc Silicon PNP Power Transistor 2SA658 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min. Complement to Type 2SC521. Minimum Lot-to-Lot variations for robust device p.

2SA658_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SA658

Manufacturer:

Inchange Semiconductor

File Size:

189.69 KB

Description:

Power Transistor

Applications

* Power amplifier applications.
* Power switching applications.
* DC-DC converter applications.
* Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Vol

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