2SB705A Datasheet - Inchange Semiconductor

2SB705A, Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB705 .
Collector-Emitter Breakdown Voltage: V(BR)CEO= -140V(Min). Complement to Type 2SD745. High Power Dissipation APPLICATIONS. For audio.

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Datasheet Details

Part number:

2SB705A

Manufacturer:

Inchange Semiconductor

File Size:

245.00 KB

Description:

Power Transistor

Applications

* For audio frequency power amplifier applications
* Suitable for output stages of 60~120 watts audio amplifier and voltage regulations. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .

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2SB705A Power Transistor Inchange Semiconductor

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