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2SB1089 - Silicon PNP Power Transistors

Description

High Collector Current:: IC= -3A Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A Complement to Type 2SD1567 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in

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Datasheet Details

Part number 2SB1089
Manufacturer Inchange Semiconductor
File Size 218.43 KB
Description Silicon PNP Power Transistors
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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current:: IC= -3A ·Low Collector Saturation Voltage : VCE(sat)= -1.5V(Max)@IC= -2A ·Complement to Type 2SD1567 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 1.
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