Datasheet Details
- Part number
- 2SB1100
- Manufacturer
- Inchange Semiconductor
- File Size
- 218.34 KB
- Datasheet
- 2SB1100-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistors
2SB1100 Description
isc Silicon PNP Darlington Power Transistor 2SB1100 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min).
High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A.
Complement to Type 2SD1591.
2SB1100 Applications
* Designed for audio frequency power amplifier and low
speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector
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