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2SB1100

Silicon PNP Power Transistors

2SB1100 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)
*High DC Current Gain- : hFE= 1000(Min)@ IC= -10A
*Complement to Type 2SD1591
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for audio frequency power amplifie.

2SB1100 Datasheet (218.34 KB)

Preview of 2SB1100 PDF

Datasheet Details

Part number:

2SB1100

Manufacturer:

Inchange Semiconductor

File Size:

218.34 KB

Description:

Silicon pnp power transistors.

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2SB1100 Silicon PNP Power Transistors Inchange Semiconductor

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