Datasheet4U Logo Datasheet4U.com

2SB1100 - Silicon PNP Power Transistors

2SB1100 Description

isc Silicon PNP Darlington Power Transistor 2SB1100 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@ IC= -10A. Complement to Type 2SD1591.

2SB1100 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector

📥 Download Datasheet

Preview of 2SB1100 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SB1100
Manufacturer
Inchange Semiconductor
File Size
218.34 KB
Datasheet
2SB1100-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

📁 Related Datasheet

  • 2SB1101 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1102 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1103 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1105 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1106 - PNP Transistor (INCHANGE)
  • 2SB1108 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1109 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1110 - PNP Transistor (Hitachi Semiconductor)

📌 All Tags

Silicon PNP Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SB1100-like datasheet