2SB1100 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor 2SB1100 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@ IC= -10A. Complement to Type 2SD1591.

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Datasheet Specifications

Part number: 2SB1100
Manufacturer: Inchange Semiconductor
File Size: 218.34 KB
Datasheet: 2SB1100-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector

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2SB1100 Silicon PNP Power Transistors Inchange Semiconductor

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