2SB1100 Datasheet - Inchange Semiconductor

2SB1100, Silicon PNP Power Transistors

isc Silicon PNP Darlington Power Transistor 2SB1100 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). High DC Current Gain- : hFE= 1000(Min)@ IC= -10A. Complement to Type 2SD1591.

datasheet Preview Page 1 from Datasheet4u.com

2SB1100-InchangeSemiconductor.pdf

2SB1100 Datasheet Preview — Preview of 2SB1100 PDF

Datasheet Details

Part number:

2SB1100

Manufacturer:

Inchange Semiconductor

File Size:

218.34 KB

Description:

Silicon PNP Power Transistors

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector

2SB1100 Distributors

📁 Related Datasheet

2SB1101 2SB1102 2SB1103 2SB1105 2SB1106 2SB1108

📌 All Tags

2SB1100 Silicon PNP Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SB1100-like datasheet