Datasheet4U Logo Datasheet4U.com

2SB1100 - Silicon PNP Power Transistors

Product Overview

📥 Download Datasheet

Datasheet preview – 2SB1100

Datasheet Details

Part number 2SB1100
Manufacturer Inchange Semiconductor
File Size 218.34 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2SB1100 Datasheet
Additional preview pages of the 2SB1100 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 1000(Min)@ IC= -10A Complement to Type 2SD1591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current switching industrial use.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100

📁 Similar Datasheet

  • 2SB1101 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1102 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1103 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1105 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1106 - PNP Transistor (INCHANGE)
  • 2SB1108 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1109 - PNP Transistor (Hitachi Semiconductor)
  • 2SB1110 - PNP Transistor (Hitachi Semiconductor)
Other Datasheets by Inchange Semiconductor
  • 2SB1144 - Silicon PNP Power Transistors
  • 2SB1152 - Silicon PNP Power Transistors
  • 2SB1153 - Silicon PNP Power Transistors
  • 2SB1182 - Silicon PNP Power Transistor
  • 2SB1184 - Silicon PNP Power Transistor
  • 2SB1089 - Silicon PNP Power Transistors
Published: |