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2SB1153 - Silicon PNP Power Transistors

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Part number 2SB1153
Manufacturer Inchange Semiconductor
File Size 219.22 KB
Description Silicon PNP Power Transistors
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min) Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -170 V VCEO Collector-Emitter Voltage -170 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP C

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