2SB1153 Datasheet - Inchange Semiconductor

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2SB1153 Silicon PNP Power Transistors

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -170V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

2SB1153-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB1153

Manufacturer:

Inchange Semiconductor

File Size:

219.22 KB

Description:

Silicon PNP Power Transistors

Applications

* Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -170 V VCEO Collector-Emitter Voltage -170 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A ICP Collector Current-Pulse Col

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2SB1153 Silicon PNP Power Transistors Inchange Semiconductor

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