* Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation TO-126 ORDER INFORMATION Part Number Type 2SB1151-Y Lead (Pb)-free A E F N L M K B H J C D 2SB1151-Y-C Lead (Pb)-free and Halogen-free Collector 2 3 Base 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless oth
2SB1151
SeCoS
298.34 KB
Pnp transistor.
Elektronische Bauelemente
2SB1151
-5 A , -60 V P P Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lea.
📁 Related Datasheet
2SB1150 - PNP Transistor
(NEC)
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2SB1151 - PNP Silicon Transistor
(NEC)
.
2SB1151 - PNP SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SB1151
PNP SILICON TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES
*High Power Dissipation *C.
2SB1151 - TO-252 PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to 2SD169.
2SB1151 - TO-126 PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to 2SD169.
2SB1151 - Silicon PNP Power Transistors
(Savantic)
SavantIC Semiconductor
Silicon PNP Power Transistors
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1691 ·Low saturation voltage ·Large curr.
2SB1152 - Silicon PNP Power Transistors
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
2SB1152
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area .
2SB1153 - Silicon PNP Power Transistors
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -170V(Min) ·Good Linearity of hFE ·Wide Area of Safe O.
