Datasheet Details
- Part number
- 2SB1152
- Manufacturer
- Inchange Semiconductor
- File Size
- 218.89 KB
- Datasheet
- 2SB1152-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistors
2SB1152 Description
isc Silicon PNP Power Transistor 2SB1152 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min).
Good Linearity of hFE.
Wide Area of Safe Operation.
Minimum Lot-to-Lot v.
2SB1152 Applications
* Designed for high power applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICP
Collector Current-Pulse
Col
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