Datasheet4U Logo Datasheet4U.com

2SB1152 - Silicon PNP Power Transistors

Product Overview

📥 Download Datasheet

Datasheet preview – 2SB1152

Datasheet Details

Part number 2SB1152
Manufacturer Inchange Semiconductor
File Size 218.89 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2SB1152 Datasheet
Additional preview pages of the 2SB1152 datasheet.

Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Co

📁 Similar Datasheet

  • 2SB1150 - PNP Transistor (NEC)
  • 2SB1151 - PNP Transistor (SeCoS)
  • 2SB1154 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1155 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1156 - PNP Transistor (Panasonic Semiconductor)
  • 2SB1157 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1158 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1159 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by Inchange Semiconductor
  • 2SB1153 - Silicon PNP Power Transistors
  • 2SB1100 - Silicon PNP Power Transistors
  • 2SB1144 - Silicon PNP Power Transistors
  • 2SB1182 - Silicon PNP Power Transistor
  • 2SB1184 - Silicon PNP Power Transistor
  • 2SB1089 - Silicon PNP Power Transistors
Published: |