2SB1152 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor 2SB1152 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number: 2SB1152
Manufacturer: Inchange Semiconductor
File Size: 218.89 KB
Datasheet: 2SB1152-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse Col

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2SB1152 Silicon PNP Power Transistors Inchange Semiconductor

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