2SB1152 Datasheet, Transistors, Inchange Semiconductor

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2SB1152

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon pnp power transistors. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) Good Linearity of hFE Wide Area of Safe Operat

2SB1152 Application

• Applications
• Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base V

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2SB1152

Inchange Semiconductor

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