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2SB1152 - Silicon PNP Power Transistors

2SB1152 Description

isc Silicon PNP Power Transistor 2SB1152 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

2SB1152 Applications

* Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICP Collector Current-Pulse Col

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Datasheet Details

Part number
2SB1152
Manufacturer
Inchange Semiconductor
File Size
218.89 KB
Datasheet
2SB1152-InchangeSemiconductor.pdf
Description
Silicon PNP Power Transistors

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Inchange Semiconductor 2SB1152-like datasheet