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2SB1152

Silicon PNP Power Transistors

2SB1152 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min)
*Good Linearity of hFE
*Wide Area of Safe Operation
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

2SB1152 Datasheet (218.89 KB)

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Datasheet Details

Part number:

2SB1152

Manufacturer:

Inchange Semiconductor

File Size:

218.89 KB

Description:

Silicon pnp power transistors.

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2SB1152 Silicon PNP Power Transistors Inchange Semiconductor

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