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2SB1152 Datasheet - Inchange Semiconductor

2SB1152 Silicon PNP Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for high power applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

2SB1152-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SB1152

Manufacturer:

Inchange Semiconductor

File Size:

218.89 KB

Description:

Silicon pnp power transistors.

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