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2SB1119 Datasheet - SeCoS

2SB1119 PNP Silicon Medium Power Transistor

2SB1119 Features

*     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e

2SB1119_SeCoS.pdf

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Datasheet Details

Part number:

2SB1119

Manufacturer:

SeCoS

File Size:

158.52 KB

Description:

Pnp silicon medium power transistor.

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2SB1119 2SB1119 PNP Silicon Medium Power Transistor SeCoS

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