2SB1119 Datasheet, Transistor, SeCoS

2SB1119 Features

• Transistor     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage juncti

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2SB1119

Manufacturer:

SeCoS

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📄 Datasheet

Description:

Pnp silicon medium power transistor.

TAGS

2SB1119

SeCoS

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