2SB1116A Description
DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
2SB1116A Features
* Low VCE(sat)
VCE(sat) =
* 0.20 V TYP. (IC =
* 1.0 A, IB =
* 50 mA)
* High PT in small dimension with general-purpose
PT = 0.75 W, VCEO =
* 50/
* 60 V, IC(DC) =
* 1.0 A
* Complementary transistor with 2SD1616 and 1616A
ABSOLUTE MAXIM
2SB1116A Applications
* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v
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