Part number:
2SB1102
Manufacturer:
Hitachi Semiconductor
File Size:
404.44 KB
Description:
Pnp transistor.
.
2SB1102
Hitachi Semiconductor
404.44 KB
Pnp transistor.
.
📁 Related Datasheet
2SB1100 - Silicon PNP Power Transistors
(Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor
2SB1100
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
.
2SB1101 - PNP Transistor
(Hitachi Semiconductor)
.
2SB1101 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1101
DESCRIPTION ·With TO-220 package ·Complemen.
2SB1101 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1101
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain-
:.
2SB1102 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1102
DESCRIPTION ·With TO-220 package ·Complemen.
2SB1102 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1102
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High DC Current Gain-
:.
2SB1103 - PNP Transistor
(Hitachi Semiconductor)
2SB1103
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0.
2SB1103 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain-
: hFE= 100.
