2SB1108 Datasheet, Transistor, Panasonic Semiconductor

PDF File Details

Part number:

2SB1108

Manufacturer:

Panasonic Semiconductor

File Size:

104.32kb

Download:

📄 Datasheet

Description:

Pnp transistor.

TAGS

2SB1108

Panasonic Semiconductor

📁 Related Datasheet

2SB1100 - Silicon PNP Power Transistors (Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- .

2SB1101 - PNP Transistor (Hitachi Semiconductor)
.

2SB1101 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION ·With TO-220 package ·Complemen.

2SB1101 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor 2SB1101 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- :.

2SB1102 - PNP Transistor (Hitachi Semiconductor)
.

2SB1102 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION ·With TO-220 package ·Complemen.

2SB1102 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor 2SB1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- :.

2SB1103 - PNP Transistor (Hitachi Semiconductor)
2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0.

2SB1103 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 100.

2SB1103 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION ·With TO-220C package ·DARLINGT.