2SB1106 Datasheet - INCHANGE

2SB1106, PNP Transistor

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A). Minimum Lot-to-L.

datasheet Preview Page 1 from Datasheet4u.com

2SB1106-INCHANGE.pdf

2SB1106 Datasheet Preview — Preview of 2SB1106 PDF

Datasheet Details

Part number:

2SB1106

Manufacturer:

INCHANGE

File Size:

209.95 KB

Description:

PNP Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collecto

2SB1106 Distributors

📁 Related Datasheet

2SB1100 2SB1101 2SB1102 2SB1103 2SB1105 2SB1108

📌 All Tags

2SB1106 PNP Transistor INCHANGE

INCHANGE 2SB1106-like datasheet