Datasheet4U Logo Datasheet4U.com

2SB1106 Datasheet - INCHANGE

2SB1106 PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifiers applications. ABSOL.

2SB1106-INCHANGE.pdf

Preview of 2SB1106 PDF
2SB1106 Datasheet Preview Page 2 2SB1106 Datasheet Preview Page 3

Datasheet Details

Part number:

2SB1106

Manufacturer:

INCHANGE

File Size:

209.95 KB

Description:

Pnp transistor.

2SB1106 Distributor

📁 Related Datasheet

2SB1100 Silicon PNP Power Transistors (Inchange Semiconductor)

2SB1101 PNP Transistor (Hitachi Semiconductor)

2SB1101 SILICON POWER TRANSISTOR (SavantIC)

2SB1101 PNP Transistor (INCHANGE)

2SB1102 PNP Transistor (Hitachi Semiconductor)

2SB1102 SILICON POWER TRANSISTOR (SavantIC)

2SB1102 PNP Transistor (INCHANGE)

2SB1103 PNP Transistor (Hitachi Semiconductor)

TAGS

2SB1106 2SB1106 PNP Transistor INCHANGE