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2SB1106 - PNP Transistor

2SB1106 Description

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A). Minimum Lot-to-L.

2SB1106 Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -6 A ICM Collecto

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Datasheet Details

Part number
2SB1106
Manufacturer
INCHANGE
File Size
209.95 KB
Datasheet
2SB1106-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1106-like datasheet