2SB1136 PNP Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min). Low Collector Saturation Voltage- : VCE(sat)= -0. Complemen.

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Datasheet Specifications

Part number: 2SB1136
Manufacturer: INCHANGE
File Size: 195.62 KB
Datasheet: 2SB1136-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for relay drivers,high-speed inverters,converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V

2SB1136 Distributors

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2SB1136 PNP Transistor INCHANGE

INCHANGE 2SB1136-like datasheet