Datasheet Details
- Part number
- 2SB1136
- Manufacturer
- INCHANGE
- File Size
- 195.62 KB
- Datasheet
- 2SB1136-INCHANGE.pdf
- Description
- PNP Transistor
2SB1136 Description
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1136 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min).
Low Collector Saturation Voltage-
: VCE(sat)= -0.
Complemen.
2SB1136 Applications
* Designed for relay drivers,high-speed inverters,converters
and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-6
V
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