2SB1103

PNP Transistor

INCHANGE

2SB1103 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
*High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for low frequency power amplifiers applications. ABSOL.

2SB1103 Datasheet (210.40 KB)

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2SB1103

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INCHANGE

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Pnp transistor.

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2SB1103 PNP Transistor INCHANGE

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2SB1103 General Description

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