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2SB1103 Datasheet - INCHANGE

2SB1103 PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power amplifiers applications. ABSOL.

2SB1103-INCHANGE.pdf

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Datasheet Details

Part number:

2SB1103

Manufacturer:

INCHANGE

File Size:

210.40 KB

Description:

Pnp transistor.

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