2SB1103 Datasheet - INCHANGE

2SB1103, PNP Transistor

isc Silicon PNP Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A). Minimum Lot-to-L.

datasheet Preview Page 1 from Datasheet4u.com

2SB1103-INCHANGE.pdf

2SB1103 Datasheet Preview — Preview of 2SB1103 PDF

Datasheet Details

Part number:

2SB1103

Manufacturer:

INCHANGE

File Size:

210.40 KB

Description:

PNP Transistor

Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -8 A ICM Collector

2SB1103 Distributors

📁 Related Datasheet

2SB1100 2SB1101 2SB1102 2SB1105 2SB1108 2SB1109

📌 All Tags

2SB1103 PNP Transistor INCHANGE

INCHANGE 2SB1103-like datasheet