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2SB1133 PNP Transistor

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Description

isc Silicon PNP Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Complement to Type 2S.

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Datasheet Specifications

Part number
2SB1133
Manufacturer
INCHANGE
File Size
209.71 KB
Datasheet
2SB1133-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A IC

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