* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity.
* Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
2SB1131
Sanyo Semicon Device
88.38 KB
Pnp transistor.
Ordering number:2420B
PNP Epitaxial Planar Silicon Transistor
2SB1131
Strobe, High-Current Switching Applications
Applications
* Strobes, power .
📁 Related Datasheet
2SB1130AM - Epitaxial Planar PNP Silicon Transistor
(Rohm)
Free Datasheet http://../
.
2SB1132 - PNP Transistor
(Rohm)
Medium Power Transistor (32V,1A)
2SB1132 / 2SA1515S / 2SB1237
Features 1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.) (IC / IB = 500mA / 50mA) 2) Comp.
2SB1132 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664
2SB1132 (PNP)
Maximum Ratings (Ta=25
P.
2SB1132 - Plastic-Encapsulate Transistors
(WILLAS)
WILLAS
S1O.0AT-S8UR9FAPClEaMsOtUicN-TESCnHcOaTTpKsYuBlAaRtReIERTrRaECnTsIFiIEsRtSo-r2s0V- 200V
SOD-123+ PACKAGE
FM120-M+ 2SB1132THRU
FM1200-M+
Pb Fre.
2SB1132 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1132 TRANSISTOR (PNP)
FEATURES z Low VCE(sat) z Comp.
2SB1132 - MEDIUM POWER TRANSISTOR
(AiT Components)
AiT Components Inc.
.ait-ponents.
2SB1132
GENERAL PURPOSE TRANSISTORS
MEDIUM POWER TRANSISTOR
DESCRIPTION
The 2SB1132 is available in SOT-8.
2SB1132 - PNP General Purpose Amplifier
(GME)
Production specification
PNP General Purpose Amplifier
FEATURES
z Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-500mA/-50mA).
z Complementary NPN type available .
2SB1132 - PNP GENERAL PURPOSE TRANSISTORS
(Power Silicon)
DATA SHEET
2SB1132
PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -32 Volts CURRENT -1.0 Ampere
FEATURES
z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITC.
