* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity.
* Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
2SB1131
Sanyo Semicon Device
88.38 KB
Pnp transistor.
Ordering number:2420B PNP Epitaxial Planar Silicon Transistor 2SB1131 Strobe, High-Current Switching Applications Applications Strobes, power .
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