2SB1131 - PNP Transistor
2SB1131 Features
* Adoption of FBET, MBIT processes.
* Low saturation voltage.
* Large current capacity.
* Fast switching time. Package Dimensions unit:mm 2006A [2SB1131] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-
