2SB1135 - PNP Transistor

Product Overview

Sanyo Semicon Device

Part number	2SB1135
Manufacturer	Sanyo Semicon Device
File Size	102.01 KB
Description	PNP Transistor
Datasheet	2SB1135 Datasheet
Additional preview pages of the 2SB1135 datasheet.

Low-saturation collector-to-emitter voltage : VCE(sat)=.
0.4V max.
Wide ASO leading to high resistance to breakdown.
Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1135/2SD1668] ( ) : 2SB1135 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Juncti.

📁 Similar Datasheet

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |