2SB1120 Datasheet - Sanyo Semicon Device

2SB1120 - PNP Transistor

2SB1120 Features

* Low collector-to-emitter saturation voltage : VCE(sat)max=

* 0.45V.

* Large current capacity : IC=

* 2.5A, ICP=

* 5A.

* Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1120] E : Emitter C : Collecto

Datasheet Details

2SB1120

Sanyo Semicon Device

77.24 KB

Pnp transistor.

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