2SB1136 Datasheet - Sanyo Semicon Device

2SB1136 PNP Transistor

2SB1136 Features

* Low-saturation collector-to-emitter voltage : VCE(sat)=

* 0.5V (PNP), 0.4V (NPN) max.

* Wide ASO leading to high resistance to breakdown.

* Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1136/2SD1669] ( ) : 2SB1136 Specifications Absolute Maximum

Datasheet Details

2SB1136

Sanyo Semicon Device

104.61 KB

Pnp transistor.

📁 Related Datasheet

2SB1130AM Epitaxial Planar PNP Silicon Transistor (Rohm)

2SB1131 PNP Transistor (Sanyo Semicon Device)

2SB1132 PNP Transistor (Rohm)

2SB1132 PNP Transistor (HOTTECH)

2SB1132 Plastic-Encapsulate Transistors (WILLAS)

2SB1132 PNP Transistor (JCET)

2SB1132 MEDIUM POWER TRANSISTOR (AiT Components)

2SB1132 PNP General Purpose Amplifier (GME)

TAGS

2SB1136 PNP Transistor Sanyo Semicon Device

2SB1136 Distributor