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2SB1101

PNP Transistor

2SB1101 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
*High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A)
*Complement to Type 2SD1601
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for low frequency power.

2SB1101 Datasheet (209.77 KB)

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Datasheet Details

Part number:

2SB1101

Manufacturer:

INCHANGE

File Size:

209.77 KB

Description:

Pnp transistor.

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2SB1101 PNP Transistor INCHANGE

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