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2SB1101 - PNP Transistor

2SB1101 Description

isc Silicon PNP Darlington Power Transistor 2SB1101 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A). Complement to Ty.

2SB1101 Applications

* Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector

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Datasheet Details

Part number
2SB1101
Manufacturer
INCHANGE
File Size
209.77 KB
Datasheet
2SB1101-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB1101-like datasheet