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2SB1101 Datasheet - INCHANGE

2SB1101 PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) *Complement to Type 2SD1601 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for low frequency power.

2SB1101-INCHANGE.pdf

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Datasheet Details

Part number:

2SB1101

Manufacturer:

INCHANGE

File Size:

209.77 KB

Description:

Pnp transistor.

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