2SB1102
INCHANGE
209.79kb
Pnp transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) *High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) *Complement
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2SB1100 - Silicon PNP Power Transistors
(Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor
2SB1100
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
.
2SB1101 - PNP Transistor
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.
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Product Specification
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DESCRIPTION ·With TO-220 package ·Complemen.
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isc Silicon PNP Darlington Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain-
:.
2SB1102 - PNP Transistor
(Hitachi Semiconductor)
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2SB1102 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
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Product Specification
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2SB1102
DESCRIPTION ·With TO-220 package ·Complemen.
2SB1103 - PNP Transistor
(Hitachi Semiconductor)
2SB1103
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter ID 4.0.
2SB1103 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·High DC Current Gain-
: hFE= 100.
2SB1103 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1103
DESCRIPTION ·With TO-220C package ·DARLINGT.
2SB1105 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
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DESCRIPTION ·With TO-220C package ·DARLINGT.
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