* High Collector Power Dissipation Complementary to 2SD1616 CLASSIFICATION OF hFE(1) Product-Rank 2SB1116-L 2SB1116-K Range 135~270 200~400 2SB1116-U 300~600 TO-92 GH J AD B K E CF 1Emitter 2Collector 3Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30
2SB1116
SeCoS
170.11 KB
Pnp plastic encapsulated transistor.
Elektronische Bauelemente
2SB1116
-1 A, -60 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
📁 Related Datasheet
2SB1110 - PNP Transistor
(Hitachi Semiconductor)
2SB1109, 2SB1110
Silicon PNP Epitaxial
Application
Low frequency high voltage amplifier plementary pair with 2SD1609 and 2SD1610
Outline
TO-126 MO.
2SB1114 - PNP Transistor
(NEC)
DATA SHEET
SILICON TRANSISTOR
2SB1114
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
The information in this document is subject to change withou.
2SB1114 - Transistor
(Kexin)
SMD Type
PNP Silicon Epitaxial Transistor 2SB1114
Transistors
Features
World standard miniature package. High DC current gain hFE=135 to 600. Low VC.
2SB1115 - PNP Transistor
(NEC)
DATA SHEET
2SB1115, 1115A
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SILICON TRANSISTOR
The information in this document is subject to change.
2SB1115 - Transistor
(Kexin)
SMD Type
PNP Silicon Epitaxial Transistor 2SB1115
Transistors
Features
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
Absolut.
2SB1115 - PNP SILICON EPITAXIAL TRANSISTOR
(Renesas)
DATA SHEET
2SB1115, 1115A
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SILICON TRANSISTOR
The information in this document is subject to change.
2SB1115A - PNP Transistor
(NEC)
DATA SHEET
2SB1115, 1115A
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SILICON TRANSISTOR
The information in this document is subject to change.
2SB1115A - Transistor
(Kexin)
SMD Type
PNP Silicon Epitaxial Transistor 2SB1115A
Transistors
Features
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
Absolu.
