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2SB965 - Silicon PNP Power Transistors

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Part number 2SB965
Manufacturer Inchange Semiconductor
File Size 205.13 KB
Description Silicon PNP Power Transistors
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Low Collector Saturation Voltage : VCE(sat)= -0.55V(Typ)@IC= -4.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type 2SD1288 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO E

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