2SB965 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 .
Low Collector Saturation Voltage : VCE(sat)= -0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min). Compleme.

📥 Download Datasheet

2SB965 Datasheet Preview — Preview of 2SB965 PDF

Datasheet Specifications

Part number: 2SB965
Manufacturer: Inchange Semiconductor
File Size: 205.13 KB
Datasheet: 2SB965_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICP Collector Current-Pulse

2SB965 Distributors

📁 Related Datasheet

2SB963 2SB963-Z 2SB966 2SB967 2SB968 2SB900

📌 All Tags

2SB965 Silicon PNP Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SB965-like datasheet