2SB967 Datasheet (Panasonic Semiconductor)

2SB967, PNP Transistor

Power Transistors 2SB967 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max q q q Possible to solder the radiation fin directly to printed cicuit board Low collector to emitter saturation voltage VCE(sat) Large collector current IC 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitt

2SB967 Features

* Unit nA µA V V

* 18

* 7 90 625

* 1 120 85 VCE(sat) V MHz pF FE Rank classification P 90 to 135 Q 125 to 205 R 180 to 625 Rank hFE 1 Power Transistors PC

* Ta 32

* 6 TC=Ta 28

* 5 IB=

* 40mA

* 35mA

* 30mA

* 25mA

* 4