Datasheet4U Logo Datasheet4U.com

2SB966 Datasheet - Inchange Semiconductor

2SB966 Silicon PNP Power Transistors

*Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *Complement to Type 2SD1289 *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

2SB966 Datasheet (205.34 KB)

Preview of 2SB966 PDF
2SB966 Datasheet Preview Page 2

Datasheet Details

Part number:

2SB966

Manufacturer:

Inchange Semiconductor

File Size:

205.34 KB

Description:

Silicon pnp power transistors.

📁 Related Datasheet

2SB962-Z Silicon PNP Power Transistor (Inchange Semiconductor)

2SB962-Z PNP Transistor (Kexin)

2SB962-Z PNP Transistor (Renesas)

2SB963 PNP Transistor (INCHANGE)

2SB963-Z PNP Transistor (NEC)

2SB963-Z PNP Transistor (INCHANGE)

2SB965 PNP Transistor (NEC)

2SB965 SILICON POWER TRANSISTOR (SavantIC)

TAGS

2SB966 Silicon PNP Power Transistors Inchange Semiconductor

2SB966 Distributor