2SB966 Datasheet, Transistors, Inchange Semiconductor

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2SB966

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Inchange Semiconductor

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205.34kb

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📄 Datasheet

Description:

Silicon pnp power transistors. *Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *Com

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2SB966

Inchange Semiconductor

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