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2SB966 Datasheet - Inchange Semiconductor

Silicon PNP Power Transistors

2SB966 General Description

*Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) *Complement to Type 2SD1289 *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

2SB966 Datasheet (205.34 KB)

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Datasheet Details

Part number:

2SB966

Manufacturer:

Inchange Semiconductor

File Size:

205.34 KB

Description:

Silicon pnp power transistors.

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2SB966 Silicon PNP Power Transistors Inchange Semiconductor

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