2SB966 - Silicon PNP Power Transistors

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Inchange Semiconductor

Datasheet Details

Part number	2SB966
Manufacturer	Inchange Semiconductor
File Size	205.34 KB
Description	Silicon PNP Power Transistors
Datasheet	2SB966 Datasheet
Additional preview pages of the 2SB966 datasheet.

Product details

Description

Low Collector Saturation Voltage : VCE(sat)= -0.65V(Typ)@IC= -5.0A Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) Complement to Type 2SD1289 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO E

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Published: Oct 25, 2013 |