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2SB979 - Silicon PNP Darlington Power Transistor

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Part number 2SB979
Manufacturer Inchange Semiconductor
File Size 220.08 KB
Description Silicon PNP Darlington Power Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications.

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