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2SB979 Silicon PNP Darlington Power Transistor

2SB979 Description

isc Silicon PNP Power Transistor 2SB979 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min). Good Linearity of hFE. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

2SB979 Applications

* Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse C

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Datasheet Details

Part number
2SB979
Manufacturer
Inchange Semiconductor
File Size
220.08 KB
Datasheet
2SB979_InchangeSemiconductor.pdf
Description
Silicon PNP Darlington Power Transistor

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Silicon PNP Darlington Power Transistor Inchange Semiconductor
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