2SC2625
Description
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
Applications
- Ultrasonic generators
- Part: 2SC2625
- Description: Silicon NPN Power Transistors
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 216.15 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| C2625 | Mospec Semiconductor | 2SC2625 |
| 2SC2625B | NELL SEMICONDUCTOR | Silicon NPN Transistor |
| 2SC2625 | Fuji Electric | TRIPLE TRANSISTOR |
| 2SC2625 | Unisonic Technologies | NPN EPITAXIAL SILICON TRANSISTOR |
| 2SC2621 | SANYO | NPN Triple Diffused Planar Silicon Transistor |
| C2621 | SANYO | 2SC2621 |
| 2SC2627 | Mitsubishi Electric | NPN TRANSISTOR |
| C2629 | Mitsubishi Electric | 2SC2629 |
| 2SC2620 | Hitachi Semiconductor | Silicon NPN Transistor |
| 2SC2628 | Mitsubishi Electric | NPN TRANSISTOR |