2SC2625 Datasheet - Inchange Semiconductor

2SC2625, Silicon NPN Power Transistors

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable ope.

Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Volta

2SC2625_InchangeSemiconductor.pdf