2SC2625 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). Minimum Lot-to-Lot variations for robust device performance and reliable ope.

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Datasheet Specifications

Part number: 2SC2625
Manufacturer: Inchange Semiconductor
File Size: 216.15 KB
Datasheet: 2SC2625_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Volta

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2SC2625 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SC2625-like datasheet