2SC3789 Silicon NPN Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3789 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Complement to Type 2SA1479 APPLICATIONS. High-definition CRT display.

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Datasheet Specifications

Part number: 2SC3789
Manufacturer: Inchange Semiconductor
File Size: 179.50 KB
Datasheet: 2SC3789-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* High-definition CRT display.
* Color TV chroma output, high breakdown voltage drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuo

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2SC3789 Silicon NPN Transistor Inchange Semiconductor

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