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2SC3719 - Power Transistor

2SC3719 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-L.

2SC3719 Applications

* Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5

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Power Transistor Inchange Semiconductor
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