2SC3719

Power Transistor

Inchange Semiconductor

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2SC3719

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Inchange Semiconductor

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Description:

Power transistor.
isc Silicon NPN Power Transistor DESCRIPTION *High Collector-Emitter Breakdown Voltage- : V(BR)CEO=.
*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) *High Switching Speed *Wide Area o.

✔ 2SC3719 Application

Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(

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2SC3719 Power Transistor Inchange Semiconductor

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✔ 2SC3719 Application

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