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2SC3719 - Power Transistor

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Part number 2SC3719
Manufacturer Inchange Semiconductor
File Size 210.93 KB
Description Power Transistor
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC C

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