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2SC3737 - Power Transistor

Datasheet Summary

Description

High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output ap

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Datasheet Details

Part number 2SC3737
Manufacturer Inchange Semiconductor
File Size 195.33 KB
Description Power Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications.
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