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2SC3737 Power Transistor

2SC3737 Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

2SC3737 Applications

* Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous

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