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2SC3737 Power Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number
2SC3737
Manufacturer
Inchange Semiconductor
File Size
195.33 KB
Datasheet
2SC3737_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous

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