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2SC3738 - Silicon NPN Transistor

Datasheet Summary

Description

High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

output applications.

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Datasheet Details

Part number 2SC3738
Manufacturer Inchange Semiconductor
File Size 197.90 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3738 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage, High Speed Switching ·Wide Area of Safe Operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 175 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3738 isc website：www.
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