Datasheet4U Logo Datasheet4U.com

2SC3729 Power Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust de.

📥 Download Datasheet

Preview of 2SC3729 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SC3729
Manufacturer
Inchange Semiconductor
File Size
196.10 KB
Datasheet
2SC3729_InchangeSemiconductor.pdf
Description
Power Transistor

Applications

* Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 6 V IC Collector Current-Continuous 5 A ICM Collector

2SC3729 Distributors

📁 Related Datasheet

📌 All Tags

Inchange Semiconductor 2SC3729-like datasheet