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2SC3998 Silicon NPN Power Transistor

2SC3998 Description

isc Silicon NPN Power Transistor .
High Switching Speed. High Breakdown Voltage- : V(BR)CBO= 1500V(Min). Minimum Lot-to-Lot variations for robust device performance and rel.

2SC3998 Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 25 A ICM Collector Cur

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Datasheet Details

Part number
2SC3998
Manufacturer
Inchange Semiconductor
File Size
211.56 KB
Datasheet
2SC3998-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
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