* High speed (tf=100ns typ).
* High reliability (adoption of HVP process).
* High breakdown voltage (VCBO=1500V).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3995] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collecto
2SC3995
Sanyo Semicon Device
111.50 KB
Silicon npn transistor.
Ordering number:EN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
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