Datasheet4U Logo Datasheet4U.com

2SC3907 - NPN Transistor

2SC3907 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min). Good Linearity of hFE. Complement to Type 2SA1516. Minimum Lot-to-Lot var.

2SC3907 Applications

* Power amplifier applications
* Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V

📥 Download Datasheet

Preview of 2SC3907 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SC3907
Manufacturer
INCHANGE
File Size
219.30 KB
Datasheet
2SC3907-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SC3900 - Epitaxial Planar Silicon Transistor (Sanyo)
  • 2SC3901 - PNP / NPN EPITAXIAL PLANAR SILICON TRANSISTORS (Sanyo)
  • 2SC3902 - PNP/NPN Transistors (Sanyo Semicon Device)
  • 2SC3904 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SC3906K - High-voltage Amplifier Transistor (Rohm)
  • 2SC3908 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3912 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SC3913 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SC3907-like datasheet